Philips buk866-400 iz 2 free download

File name buk866-400_iz_2.pdf

Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level SYMBOL PARAMETER MIN. TYP. MAX. UNIT insulated gate bipolar power transistor in a plastic envelope V(CL)CER Collector-emitter clamp voltage 370 410 500 V suitable for surface mount VCEsat Collector-emitter on-state voltage 2.2 V applications. It is intended for IC Collector current (DC) 20 A automotive ignition applications, and Ptot Total power dissipation 100 W has integral zener diodes providing ECERS Clamped energy dissipation 300 mJ active collector voltage clamping and ESD protection up to 2 kV. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION c mb 1 gate 2 collector 3 emitter g 2 tab collector 1 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCE Collecter-emitter voltage tp 500